APT30GP60BDQ1G
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- Mfr.Part #
- APT30GP60BDQ1G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 100A 463W TO247
- Stock
- 43,398
- In Stock ：
- 43,398
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Power - Max :
- 463W
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 165 ns
- Test Condition :
- 400V, 30A, 5 Ω, 15V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 120A
- Mount :
- Through Hole
- Switching Energy :
- 260μJ (on), 250μJ (off)
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 13ns/55ns
- IGBT Type :
- PT
- Max Power Dissipation :
- 463W
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Current Rating :
- 30A
- Additional Feature :
- LOW CONDUCTION LOSS
- Transistor Application :
- POWER CONTROL
- Collector Emitter Voltage (VCEO) :
- 600V
- Case Connection :
- COLLECTOR
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 30A
- Collector Emitter Breakdown Voltage :
- 600V
- Turn On Time :
- 31 ns
- Voltage - Rated DC :
- 600V
- Max Collector Current :
- 100A
- Element Configuration :
- Single
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Series :
- POWER MOS 7®
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge :
- 90nC
- Datasheets
- APT30GP60BDQ1G
APT30GP60BDQ1G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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