APT30GP60B2DLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-247-3

Radiation Hardening :

No

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e1

Factory Lead Time :

22 Weeks

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

463W

ECCN Code :

EAR99

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)

JEDEC-95 Code :

TO-247AD

IGBT Type :

PT

Published :

2001

Turn Off Time-Nom (toff) :

164 ns

Transistor Application :

Motor Control

Gate Charge :

90nC

Mounting Type :

Through Hole

Packaging :

Tube

Current - Collector Pulsed (Icm) :

120A

RoHS Status :

RoHS Compliant

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

463W

Max Collector Current :

100A

Mount :

Through Hole

Switching Energy :

260μJ (on), 250μJ (off)

Input Type :

Standard

Number of Pins :

3

Element Configuration :

Single

Turn On Time :

31 ns

Test Condition :

400V, 30A, 5 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

13ns/55ns

Pin Count :

3