APT18M80S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Drain-source On Resistance-Max :

0.53Ohm

Peak Reflow Temperature (Cel) :

245

Terminal Form :

Gull wing

FET Type :

N-Channel

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

19A

Pulsed Drain Current-Max (IDM) :

70A

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

795 mJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Pbfree Code :

yes

Terminal Position :

Single

Vgs (Max) :

±30V

Power Dissipation-Max :

500W Tc

Packaging :

Bulk

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

800V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

530m Ω @ 9A, 10V

Series :

POWER MOS 8™

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

PURE MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

3760pF @ 25V