APT18M80B
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- Mfr.Part #
- APT18M80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 19A TO247
- Stock
- 45,351
- In Stock ：
- 45,351
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.53Ohm
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Power Dissipation :
- 500W
- Fall Time (Typ) :
- 27 ns
- Package / Case :
- TO-247-3
- Voltage - Rated DC :
- 800V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 500W Tc
- Turn On Delay Time :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3760pF @ 25V
- Avalanche Energy Rating (Eas) :
- 795 mJ
- Pulsed Drain Current-Max (IDM) :
- 70A
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 9A, 10V
- Series :
- POWER MOS 8™
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 31ns
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Number of Terminations :
- 3
- Pin Count :
- 3
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 19A
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 95 ns
- Current Rating :
- 18A
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Published :
- 1997
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Datasheets
- APT18M80B
N-Channel Tube 530m Ω @ 9A, 10V ±30V 3760pF @ 25V 120nC @ 10V TO-247-3
APT18M80B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 795 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3760pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 95 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT18M80B Features
the avalanche energy rating (Eas) is 795 mJ
a continuous drain current (ID) of 19A
the turn-off delay time is 95 ns
based on its rated peak drain current 70A.
APT18M80B Applications
There are a lot of Microsemi Corporation
APT18M80B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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