APT17N80SC3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

208W Tc

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

290m Ω @ 11A, 10V

Avalanche Energy Rating (Eas) :

670 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

51A

Published :

2004

Number of Terminations :

2

Pbfree Code :

yes

Vgs (Max) :

±20V

Current Rating :

17A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

17A

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Case Connection :

DRAIN

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.29Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Terminal Finish :

PURE MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Voltage - Rated DC :

800V

Peak Reflow Temperature (Cel) :

245

Packaging :

Tube

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Reach Compliance Code :

Unknown

Mount :

Surface Mount