APT17N80BC3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

51A

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.29Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

17A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Rds On (Max) @ Id, Vgs :

290m Ω @ 11A, 10V

Published :

2004

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Voltage - Rated DC :

800V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Pin Count :

3

Mounting Type :

Through Hole

FET Type :

N-Channel

Case Connection :

DRAIN

Power Dissipation-Max :

208W Tc

Current Rating :

17A

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

670 mJ

Additional Feature :

AVALANCHE RATED