APT17F80B
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- Mfr.Part #
- APT17F80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 18A TO247
- Stock
- 35,220
- In Stock ：
- 35,220
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 580m Ω @ 9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3757pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 800V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.58Ohm
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Continuous Drain Current (ID) :
- 18A
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Published :
- 1997
- Power Dissipation-Max :
- 500W Tc
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 797 mJ
- Pulsed Drain Current-Max (IDM) :
- 70A
- Current Rating :
- 17A
- Mounting Type :
- Through Hole
- Series :
- POWER MOS 8™
- Power Dissipation :
- 500W
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AD
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 93 ns
- Rise Time :
- 31ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Turn On Delay Time :
- 21 ns
- Terminal Position :
- Single
- Pin Count :
- 3
- Fall Time (Typ) :
- 27 ns
- Datasheets
- APT17F80B
N-Channel Tube 580m Ω @ 9A, 10V ±30V 3757pF @ 25V 122nC @ 10V TO-247-3
APT17F80B Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 797 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3757pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.It is [93 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 70A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT17F80B Features
the avalanche energy rating (Eas) is 797 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 93 ns
based on its rated peak drain current 70A.
APT17F80B Applications
There are a lot of Microsemi Corporation
APT17F80B applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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