APT17F100B
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- Mfr.Part #
- APT17F100B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 17A TO247
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4845pF @ 25V
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Width :
- 16.26mm
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 9A, 10V
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 22 Weeks
- Radiation Hardening :
- No
- Length :
- 21.46mm
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 68A
- Package / Case :
- TO-247-3
- Continuous Drain Current (ID) :
- 17A
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-247AB
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Drain-source On Resistance-Max :
- 0.8Ohm
- Turn-Off Delay Time :
- 105 ns
- Power Dissipation-Max :
- 625W Tc
- Weight :
- 38.000013g
- Current Rating :
- 17A
- Published :
- 1997
- Power Dissipation :
- 625W
- Turn On Delay Time :
- 29 ns
- Fall Time (Typ) :
- 28 ns
- Height :
- 5.31mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 1000V
- Rise Time :
- 31ns
- Additional Feature :
- HIGH RELIABILITY, AVALANCHE RATED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Voltage - Rated DC :
- 1kV
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- APT17F100B
N-Channel Tube 800m Ω @ 9A, 10V ±30V 4845pF @ 25V 150nC @ 10V 1000V TO-247-3
APT17F100B Overview
A device's maximum input capacitance is 4845pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 17A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 105 ns.Its maximum pulsed drain current is 68A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT17F100B Features
a continuous drain current (ID) of 17A
the turn-off delay time is 105 ns
based on its rated peak drain current 68A.
a 1000V drain to source voltage (Vdss)
APT17F100B Applications
There are a lot of Microsemi Corporation
APT17F100B applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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