APT15F60B

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current Rating :

15A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

290W Tc

Drain-source On Resistance-Max :

0.43Ohm

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Power Dissipation :

290W

Vgs(th) (Max) @ Id :

5V @ 500µA

Rds On (Max) @ Id, Vgs :

430m Ω @ 7A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Turn On Delay Time :

16 ns

JESD-609 Code :

e1

Turn-Off Delay Time :

49 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Pin Count :

3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

16A

Pulsed Drain Current-Max (IDM) :

54A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Voltage - Rated DC :

600V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-247-3

Avalanche Energy Rating (Eas) :

405 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2882pF @ 25V

Lead Free :

Lead Free

Published :

2011

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Mount :

Through Hole

Fall Time (Typ) :

15 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

POWER MOS 8™

Rise Time :

19ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V