APT150GN120J
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- Mfr.Part #
- APT150GN120J
- Manufacturer
- Microchip Technology
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- IGBT MOD 1200V 215A 625W ISOTOP
- Stock
- 34,429
- In Stock ：
- 34,429
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Modules
- Terminal Position :
- UPPER
- Number of Elements :
- 1
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 150A
- Package / Case :
- ISOTOP
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.7V
- Number of Terminations :
- 4
- Configuration :
- Single
- Terminal Form :
- UNSPECIFIED
- Input Capacitance (Cies) @ Vce :
- 9.5nF @ 25V
- Input Capacitance :
- 9.5nF
- Pin Count :
- 4
- Height :
- 9.6mm
- Max Collector Current :
- 215A
- Weight :
- 30.000004g
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 1.2kV
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Pbfree Code :
- yes
- NTC Thermistor :
- No
- Max Power Dissipation :
- 625W
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 4
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time :
- 120 ns
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Voltage-Max :
- 30V
- Length :
- 38.2mm
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 1.2kV
- IGBT Type :
- Trench Field Stop
- Turn Off Time-Nom (toff) :
- 955 ns
- Width :
- 25.4mm
- Published :
- 1999
- Additional Feature :
- LOW CONDUCTION LOSS, UL RECOGNIZED
- Mount :
- Chassis Mount, Screw
- Input :
- Standard
- Transistor Application :
- POWER CONTROL
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 24 Weeks
- Current Rating :
- 215A
- Transistor Element Material :
- SILICON
- Datasheets
- APT150GN120J
APT150GN120J datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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