APT14M100B

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Mfr.Part #
APT14M100B
Manufacturer
Microchip Technology
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 14A TO247
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
95 ns
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Published :
1997
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Vgs (Max) :
±30V
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Width :
16.26mm
Length :
21.46mm
Series :
POWER MOS 8™
Drain to Source Breakdown Voltage :
1kV
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
28 ns
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Rds On (Max) @ Id, Vgs :
900m Ω @ 7A, 10V
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 1mA
JESD-30 Code :
R-PSFM-T3
Current Rating :
14A
Continuous Drain Current (ID) :
14A
Terminal Position :
Single
Power Dissipation-Max :
500W Tc
Number of Elements :
1
Transistor Element Material :
SILICON
Voltage - Rated DC :
1kV
Pbfree Code :
yes
Rise Time :
29ns
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Fall Time (Typ) :
26 ns
Radiation Hardening :
No
Pulsed Drain Current-Max (IDM) :
55A
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Power Dissipation :
500W
Mounting Type :
Through Hole
Factory Lead Time :
18 Weeks
Avalanche Energy Rating (Eas) :
875 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
Weight :
38.000013g
Input Capacitance (Ciss) (Max) @ Vds :
3965pF @ 25V
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
1000V
Drain-source On Resistance-Max :
0.88Ohm
Height :
5.31mm
Mount :
Through Hole
Case Connection :
DRAIN
Datasheets
APT14M100B
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APT14M100B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, APT14M100B pinout, APT14M100B datasheet PDF, APT14M100B amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APT14M100B ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology APT14M100B


N-Channel Tube 900m Ω @ 7A, 10V ±30V 3965pF @ 25V 120nC @ 10V 1000V TO-247-3

APT14M100B Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 875 mJ.A device's maximal input capacitance is 3965pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 95 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 55A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 28 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

APT14M100B Features


the avalanche energy rating (Eas) is 875 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 55A.
a 1000V drain to source voltage (Vdss)


APT14M100B Applications


There are a lot of Microsemi Corporation
APT14M100B applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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