APT12080JVR

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

15A

Terminal Position :

UPPER

Additional Feature :

UL RECOGNIZED

Rds On (Max) @ Id, Vgs :

800m Ω @ 7.5A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

JESD-30 Code :

R-PUFM-X4

Drain to Source Voltage (Vdss) :

1200V

Series :

POWER MOS V®

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 25V

Package / Case :

SOT-227-4, miniBLOC

Pulsed Drain Current-Max (IDM) :

60A

Turn On Delay Time :

16 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

485nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Rise Time :

12ns

Power Dissipation-Max :

450W Tc

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Terminal Form :

UNSPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Published :

1999

Packaging :

Tube

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

2500 mJ

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

59 ns

Number of Terminations :

4

DS Breakdown Voltage-Min :

1200V

Gate to Source Voltage (Vgs) :

30V

Mount :

Screw

Drain-source On Resistance-Max :

0.8Ohm