APT12057JFLL

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Schedule B :

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Series :

POWER MOS 7®

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Compliant

Max Operating Temperature :

150 °C

Drain Current-Max (Abs) (ID) :

19 A

Pin Count :

4

Avalanche Energy Rating (Eas) :

3000 mJ

Product Status :

Active

Rise Time :

18 ns

Package / Case :

SOT-227-4, miniBLOC

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Transistor Application :

SWITCHING

Current Rating :

19 A

Continuous Drain Current (ID) :

19 A

Power Dissipation-Max (Abs) :

520 W

Surface Mount :

No

Technology :

MOSFET (Metal Oxide)

Mount :

Chassis Mount, Screw

Current - Continuous Drain (Id) @ 25°C :

19A (Tc)

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

1200 V

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Max Power Dissipation :

520 W

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

1200 V

Supplier Device Package :

ISOTOP®

Polarity/Channel Type :

N-Channel

Voltage Rating (DC) :

1.2 kV

Min Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

5155 pF @ 25 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

4

Base Product Number :

APT12057

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

570mOhm @ 9.5A, 10V

Gate to Source Voltage (Vgs) :

30 V

Radiation Hardening :

No

Input Capacitance :

5.155 nF

FET Feature :

-

Turn-Off Delay Time :

36 ns

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

185 nC @ 10 V

Rds On Max :

570 mΩ

Pulsed Drain Current-Max (IDM) :

76 A

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PUFM-X4

Turn-On Delay Time :

11 ns

Terminal Form :

UNSPECIFIED

Drain-source On Resistance-Max :

0.57 Ω

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

Production (Last Updated: 2 months ago)

Package :

Tube

FET Type :

N-Channel

Power Dissipation :

520 W

Number of Elements :

1

Terminal Position :

UPPER