APT12057B2LLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Power Dissipation-Max :

690W Tc

JESD-609 Code :

e1

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

1200V

Vgs (Max) :

±30V

Factory Lead Time :

31 Weeks

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

TIN SILVER COPPER

Published :

1997

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Package / Case :

TO-247-3

DS Breakdown Voltage-Min :

1200V

Packaging :

Bulk

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Pulsed Drain Current-Max (IDM) :

88A

Number of Terminations :

3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Continuous Drain Current (ID) :

22A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

3000 mJ

Transistor Application :

SWITCHING

Mount :

Through Hole

Drain-source On Resistance-Max :

0.57Ohm

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 7®

Rds On (Max) @ Id, Vgs :

570m Ω @ 11A, 10V