APT1201R4BFLLG
- Mfr.Part #
- APT1201R4BFLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 9A TO247
- Stock
- 43,448
- In Stock :
- 43,448
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1200V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Published :
- 1997
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2030pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 4.5A, 10V
- Rise Time :
- 5ns
- Package / Case :
- TO-247-3
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 36A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Series :
- POWER MOS 7®
- Factory Lead Time :
- 34 Weeks
- JESD-609 Code :
- e1
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 1.2kV
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 27 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 9A
- Drain Current-Max (Abs) (ID) :
- 9A
- Turn On Delay Time :
- 8 ns
- JEDEC-95 Code :
- TO-247AD
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 9A
- Fall Time (Typ) :
- 11 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Datasheets
- APT1201R4BFLLG

N-Channel Tube 1.5 Ω @ 4.5A, 10V ±30V 2030pF @ 25V 75nC @ 10V 1200V TO-247-3
APT1201R4BFLLG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2030pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 27 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT1201R4BFLLG Features
a continuous drain current (ID) of 9A
the turn-off delay time is 27 ns
based on its rated peak drain current 36A.
a 1200V drain to source voltage (Vdss)
APT1201R4BFLLG Applications
There are a lot of Microsemi Corporation
APT1201R4BFLLG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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