APT11N80KC3G
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- Mfr.Part #
- APT11N80KC3G
- Manufacturer
- Microsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO220
- Stock
- 25,025
- In Stock ：
- 25,025
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Weight :
- 6.000006g
- Rise Time :
- 15ns
- Published :
- 2012
- Pbfree Code :
- yes
- Width :
- 4.82mm
- Power Dissipation :
- 156W
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 7.1A, 10V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Terminal Finish :
- TIN SILVER COPPER
- Turn On Delay Time :
- 25 ns
- Drain-source On Resistance-Max :
- 0.45Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 470 mJ
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 7 ns
- Length :
- 10.66mm
- Turn-Off Delay Time :
- 70 ns
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 11A
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 11A
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Series :
- CoolMOS™
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 156W Tc
- Height :
- 9.66mm
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Voltage - Rated DC :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.9V @ 680μA
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- APT11N80KC3G
N-Channel Tube 450m Ω @ 7.1A, 10V ±20V 1585pF @ 25V 60nC @ 10V TO-220-3
APT11N80KC3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 470 mJ.A device's maximum input capacitance is 1585pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT11N80KC3G Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 70 ns
APT11N80KC3G Applications
There are a lot of Microsemi Corporation
APT11N80KC3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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