APT11N80BC3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

156W

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

11A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.45Ohm

JEDEC-95 Code :

TO-247AD

Pin Count :

3

Qualification Status :

Not Qualified

Turn-Off Delay Time :

70 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Fall Time (Typ) :

7 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

3.9V @ 680μA

Published :

1997

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

1

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1585pF @ 25V

Width :

16.26mm

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Voltage - Rated DC :

800V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Factory Lead Time :

24 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Rds On (Max) @ Id, Vgs :

450m Ω @ 7.1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

15ns

Height :

5.31mm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

33A

FET Type :

N-Channel

Turn On Delay Time :

25 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

156W Tc

Gate to Source Voltage (Vgs) :

20V

Weight :

38.000013g

Additional Feature :

AVALANCHE RATED

Current Rating :

11A

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

470 mJ

Length :

21.46mm