APT11F80B
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- Mfr.Part #
- APT11F80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 12A TO247
- Stock
- 19,285
- In Stock ：
- 19,285
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- POWER MOS 8™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- High Reliability
- Pin Count :
- 3
- Radiation Hardening :
- No
- Factory Lead Time :
- 35 Weeks
- Turn-Off Delay Time :
- 61 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 800V
- Pulsed Drain Current-Max (IDM) :
- 46A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2471pF @ 25V
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 1Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Turn On Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 6A, 10V
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 524 mJ
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 337W Tc
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1997
- Current Rating :
- 11A
- JEDEC-95 Code :
- TO-247AD
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 18 ns
- Rise Time :
- 20ns
- Continuous Drain Current (ID) :
- 12A
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Datasheets
- APT11F80B
N-Channel Tube 900m Ω @ 6A, 10V ±30V 2471pF @ 25V 80nC @ 10V TO-247-3
APT11F80B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 524 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2471pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 61 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 46A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT11F80B Features
the avalanche energy rating (Eas) is 524 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 61 ns
based on its rated peak drain current 46A.
APT11F80B Applications
There are a lot of Microsemi Corporation
APT11F80B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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