APT10M11JVR
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- Mfr.Part #
- APT10M11JVR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 144A ISOTOP
- Stock
- 46,853
- In Stock ：
- 46,853
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 450W Tc
- Rise Time :
- 48ns
- Factory Lead Time :
- 16 Weeks
- Terminal Position :
- UPPER
- Number of Terminations :
- 4
- Additional Feature :
- AVALANCHE RATED
- Height :
- 9.6mm
- Turn-Off Delay Time :
- 51 ns
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 71A, 10V
- Package / Case :
- SOT-227-4, miniBLOC
- Turn On Delay Time :
- 16 ns
- Pin Count :
- 4
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 9 ns
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 142A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Width :
- 25.4mm
- Power Dissipation :
- 450W
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Chassis Mount, Screw
- Terminal Form :
- UNSPECIFIED
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Resistance :
- 11mOhm
- Weight :
- 30.000004g
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Length :
- 38.2mm
- Continuous Drain Current (ID) :
- 142A
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 576A
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Mounting Type :
- Chassis Mount
- Pbfree Code :
- yes
- Datasheets
- APT10M11JVR
N-Channel Bulk 11m Ω @ 71A, 10V ±30V 8600pF @ 25V 300nC @ 10V 100V SOT-227-4, miniBLOC
APT10M11JVRU3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8600pF @ 25V.This device conducts a continuous drain current (ID) of 142A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 51 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 576A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT10M11JVRU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 142A
the turn-off delay time is 51 ns
based on its rated peak drain current 576A.
a 100V drain to source voltage (Vdss)
APT10M11JVRU3 Applications
There are a lot of Microsemi Corporation
APT10M11JVRU3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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