APT100M50J
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- Mfr.Part #
- APT100M50J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 103A SOT227
- Stock
- 27,334
- In Stock ：
- 27,334
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount, Screw
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 38.2mm
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 960W Tc
- Continuous Drain Current (ID) :
- 100A
- Height :
- 9.6mm
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Case Connection :
- Isolated
- Current Rating :
- 100A
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 105 ns
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 103A Tc
- Weight :
- 30.000004g
- Transistor Application :
- SWITCHING
- Terminal Form :
- UNSPECIFIED
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 280 ns
- Width :
- 25.4mm
- Fall Time (Typ) :
- 90 ns
- Drain to Source Breakdown Voltage :
- 500V
- Drain-source On Resistance-Max :
- 0.036Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 620nC @ 10V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Avalanche Energy Rating (Eas) :
- 3350 mJ
- Mounting Type :
- Chassis Mount
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 960W
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Package / Case :
- SOT-227-4, miniBLOC
- Factory Lead Time :
- 18 Weeks
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 75A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 24600pF @ 25V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 4
- Rise Time :
- 125ns
- Number of Pins :
- 4
- FET Type :
- N-Channel
- Published :
- 1997
- Terminal Position :
- UPPER
- Voltage - Rated DC :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT100M50J
N-Channel Tube 38m Ω @ 75A, 10V ±30V 24600pF @ 25V 620nC @ 10V SOT-227-4, miniBLOC
APT100M50J Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3350 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 24600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 280 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 105 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT100M50J Features
the avalanche energy rating (Eas) is 3350 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 280 ns
APT100M50J Applications
There are a lot of Microsemi Corporation
APT100M50J applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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