APT10090BLLG
- Mfr.Part #
- APT10090BLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12A TO247
- Stock
- 43,706
- In Stock :
- 43,706
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Packaging :
- Tube
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Drain-source On Resistance-Max :
- 0.9Ohm
- Rise Time :
- 5ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Voltage - Rated DC :
- 1kV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 12A
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 9 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1969pF @ 25V
- Published :
- 1997
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 48A
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 19 Weeks
- Current Rating :
- 12A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 298W
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 6A, 10V
- Turn-Off Delay Time :
- 23 ns
- Series :
- POWER MOS 7®
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 4 ns
- Power Dissipation-Max :
- 298W Tc
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- JEDEC-95 Code :
- TO-247AD
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Datasheets
- APT10090BLLG

N-Channel Tube 950m Ω @ 6A, 10V ±30V 1969pF @ 25V 71nC @ 10V 1000V TO-247-3
APT10090BLLG Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1969pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT10090BLLG Features
a continuous drain current (ID) of 12A
the turn-off delay time is 23 ns
based on its rated peak drain current 48A.
a 1000V drain to source voltage (Vdss)
APT10090BLLG Applications
There are a lot of Microsemi Corporation
APT10090BLLG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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