APT10035LLLG
- Mfr.Part #
- APT10035LLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 28A TO264
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 9 ns
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 14A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.35Ohm
- Continuous Drain Current (ID) :
- 28A
- Power Dissipation :
- 690W
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Current Rating :
- 28A
- Power Dissipation-Max :
- 690W Tc
- Series :
- POWER MOS 7®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Rise Time :
- 10ns
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5185pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Voltage - Rated DC :
- 1kV
- Published :
- 1997
- JESD-30 Code :
- R-PSFM-T3
- Turn On Delay Time :
- 12 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 36 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 15 Weeks
- Datasheets
- APT10035LLLG
N-Channel Tube 350m Ω @ 14A, 10V ±30V 5185pF @ 25V 186nC @ 10V 1000V TO-264-3, TO-264AA
APT10035LLLG Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5185pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 28A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APT10035LLLG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 28A
the turn-off delay time is 36 ns
a 1000V drain to source voltage (Vdss)
APT10035LLLG Applications
There are a lot of Microsemi Corporation
APT10035LLLG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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