55GN01MA-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

10V

Height :

900μm

Gain :

10dB @ 1GHz

Max Frequency :

5.5GHz

Width :

2.1mm

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

10V

Length :

2mm

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

JESD-609 Code :

e6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2011

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Frequency - Transition :

4.5GHz~5.5GHz

Package / Case :

SC-70, SOT-323

Pbfree Code :

yes

Element Configuration :

Single

Number of Pins :

3

Collector Base Voltage (VCBO) :

20V

Pin Count :

3

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

hFE Min :

200

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Power Dissipation :

400mW

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Transition Frequency :

3000MHz

Factory Lead Time :

2 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Max Collector Current :

70mA

Packaging :

Tape and Reel (TR)