55GN01CA-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Terminal Position :

Dual

Width :

1.5mm

hFE Min :

100

Number of Pins :

3

Max Breakdown Voltage :

10V

Number of Terminations :

3

Continuous Collector Current :

5mA

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin/Bismuth (Sn/Bi)

ECCN Code :

EAR99

Max Collector Current :

70mA

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

10V

Pbfree Code :

yes

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Gain :

9.5dB

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

10V

Surface Mount :

yes

Power - Max :

200mW

Frequency :

5.5GHz

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.9mm

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

4.5 GHz

Terminal Form :

Gull wing

Pin Count :

3

Transition Frequency :

5500MHz

Number of Elements :

1

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

20V

Published :

2012

Height :

1.1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Polarity/Channel Type :

NPN

Factory Lead Time :

5 Weeks

JESD-609 Code :

e6