55GN01CA-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Surface Mount

Gain Bandwidth Product :

4.5 GHz

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

3V

Element Configuration :

Single

Max Breakdown Voltage :

10V

Number of Pins :

3

Continuous Collector Current :

5mA

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Collector Emitter Breakdown Voltage :

10V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Factory Lead Time :

5 Weeks

Terminal Position :

Dual

Number of Terminations :

3

JESD-609 Code :

e6

Pbfree Code :

yes

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Polarity/Channel Type :

NPN

Frequency :

5.5GHz

Width :

1.5mm

Length :

2.9mm

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

10V

Max Collector Current :

70mA

Pin Count :

3

Surface Mount :

yes

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

Gain :

9.5dB

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2012

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Transition Frequency :

5500MHz

Power - Max :

200mW

Terminal Form :

Gull wing