2STR2230
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- Mfr.Part #
- 2STR2230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A SOT23-3
- Stock
- 6,466
- In Stock ：
- 6,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- 2STR
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -420mV
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Mount :
- Surface Mount
- Width :
- 1.3mm
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- -30V
- Height :
- 950μm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- MATTE TIN
- Number of Pins :
- 3
- Max Collector Current :
- 1.5A
- hFE Min :
- 70
- Current Rating :
- -1.5A
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Voltage - Rated DC :
- -30V
- Datasheets
- 2STR2230
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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