2STR2230
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- Mfr.Part #
- 2STR2230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A SOT23-3
- Stock
- 6,466
- In Stock ：
- 6,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -420mV
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -30V
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Current Rating :
- -1.5A
- Terminal Form :
- Gull wing
- Height :
- 950μm
- Terminal Finish :
- MATTE TIN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- hFE Min :
- 70
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 500mW
- Length :
- 2.9mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Base Part Number :
- 2STR
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- -30V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Datasheets
- 2STR2230
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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