2STR2230
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- Mfr.Part #
- 2STR2230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A SOT23-3
- Stock
- 6,466
- In Stock ：
- 6,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 500mW
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Base Part Number :
- 2STR
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -30V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- Height :
- 950μm
- Collector Emitter Breakdown Voltage :
- -30V
- Power Dissipation :
- 500mW
- Lead Free :
- Lead Free
- hFE Min :
- 70
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Position :
- Dual
- Max Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Current Rating :
- -1.5A
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -420mV
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Datasheets
- 2STR2230
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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