2STR1230
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- Mfr.Part #
- 2STR1230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A SOT23-3
- Stock
- 4,529
- In Stock ：
- 4,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Max Collector Current :
- 1.5A
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Height :
- 950μm
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 850mV
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- hFE Min :
- 210
- Base Part Number :
- 2STR
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1.5A
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- 2STR1230
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 850mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR1230 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
2STR1230 Applications
There are a lot of STMicroelectronics
2STR1230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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