2STR1230
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- Mfr.Part #
- 2STR1230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A SOT23-3
- Stock
- 4,529
- In Stock ：
- 4,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1.5A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- Number of Pins :
- 3
- hFE Min :
- 210
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Current Rating :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- 2STR
- ECCN Code :
- EAR99
- Height :
- 950μm
- Power Dissipation :
- 500mW
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Length :
- 2.9mm
- Max Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Voltage - Rated DC :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 30V
- Width :
- 1.3mm
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 850mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2STR1230
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 850mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR1230 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
2STR1230 Applications
There are a lot of STMicroelectronics
2STR1230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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