2STR2160
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- Mfr.Part #
- 2STR2160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 7,250
- In Stock ：
- 7,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -260mV
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 500mW
- hFE Min :
- 45
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- 2STR
- Contact Plating :
- Tin
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 480mV @ 100mA, 1A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- PNP
- Datasheets
- 2STR2160
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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