2STR2160
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- Mfr.Part #
- 2STR2160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 7,250
- In Stock ：
- 7,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 480mV @ 100mA, 1A
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 500mW
- Base Part Number :
- 2STR
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 45
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -260mV
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2STR2160
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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