2STR2160
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- Mfr.Part #
- 2STR2160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 7,250
- In Stock ：
- 7,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Mount :
- Surface Mount
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 45
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 480mV @ 100mA, 1A
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -260mV
- Base Part Number :
- 2STR
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Datasheets
- 2STR2160
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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