2STR2160

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Max Breakdown Voltage :

60V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 500mA 2V

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

2STR

Collector Emitter Saturation Voltage :

-260mV

Element Configuration :

Single

Transistor Application :

SWITCHING

Max Collector Current :

1A

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

500mW

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

500mW

hFE Min :

45

Transistor Type :

PNP

Factory Lead Time :

8 Weeks

Pin Count :

3

Terminal Form :

Gull wing

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

480mV @ 100mA, 1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Mounting Type :

Surface Mount