2STR1160
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- Mfr.Part #
- 2STR1160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 18,891
- In Stock ：
- 18,891
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Base Part Number :
- 2STR
- Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN
- Width :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Height :
- 1.3mm
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 430mV
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 210
- hFE Min :
- 180
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Datasheets
- 2STR1160
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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