2STR1160
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- Mfr.Part #
- 2STR1160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 18,891
- In Stock ：
- 18,891
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Height :
- 1.3mm
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Width :
- 1.6mm
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Power Dissipation :
- 500mW
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Base Part Number :
- 2STR
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Length :
- 3.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 1A
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 430mV
- Peak Reflow Temperature (Cel) :
- 210
- hFE Min :
- 180
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Datasheets
- 2STR1160
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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