2STR1215
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- Mfr.Part #
- 2STR1215
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 1.5A SOT23-3
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 15V
- Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 15V
- Pin Count :
- 3
- Height :
- 950μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 15V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 850mV
- Width :
- 1.3mm
- ECCN Code :
- EAR99
- Base Part Number :
- 2STR
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 500mW
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 15V
- Datasheets
- 2STR1215
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 850mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2STR1215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR1215 Applications
There are a lot of STMicroelectronics
2STR1215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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