2SD1816S-TL-H
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- Mfr.Part #
- 2SD1816S-TL-H
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TPFA
- Stock
- 4,631
- In Stock ：
- 4,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 1W
- Base Part Number :
- 2SD1816
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Surface Mount :
- yes
- Transition Frequency :
- 180MHz
- Factory Lead Time :
- 2 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Length :
- 6.5mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- ECCN Code :
- EAR99
- Published :
- 2017
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Frequency - Transition :
- 180MHz
- HTS Code :
- 8541.29.00.75
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 120V
- JESD-609 Code :
- e6
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Height :
- 2.3mm
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- hFE Min :
- 70
- Width :
- 5.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 180MHz
- Number of Pins :
- 3
- Datasheets
- 2SD1816S-TL-H
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1816S-TL-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 180MHz.A maximum collector current of 4A volts can be achieved.
2SD1816S-TL-H Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-TL-H Applications
There are a lot of ON Semiconductor
2SD1816S-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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