2SD1815T-TL-E
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- Mfr.Part #
- 2SD1815T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TPFA
- Stock
- 36,143
- In Stock ：
- 36,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 180MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Length :
- 6.5mm
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Base Part Number :
- 2SD1815
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Max Frequency :
- 180MHz
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e6
- Collector Emitter Saturation Voltage :
- 400mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Width :
- 2.3mm
- Pbfree Code :
- yes
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Height :
- 5.5mm
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- 2SD1815T-TL-E
NPN 150°C TJ 1μA ICBO NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1815T-TL-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 150mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SD1815T-TL-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-TL-E Applications
There are a lot of ON Semiconductor
2SD1815T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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