2SD1815S-TL-E
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- Mfr.Part #
- 2SD1815S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TPFA
- Stock
- 9,796
- In Stock ：
- 9,796
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Frequency :
- 180MHz
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- Length :
- 6.5mm
- Contact Plating :
- Tin
- Height :
- 2.3mm
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Published :
- 2003
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Factory Lead Time :
- 7 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- 2SD1815
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e6
- Width :
- 5.5mm
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Saturation Voltage :
- 150mV
- Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SD1815S-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1815S-TL-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 5V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 150mA, 1.5A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SD1815S-TL-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815S-TL-E Applications
There are a lot of ON Semiconductor
2SD1815S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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