2SD1801S-TL-E
- Mfr.Part #
- 2SD1801S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TPFA
- Stock
- 8,030
- In Stock :
- 8,030
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 150MHz
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Height :
- 2.3mm
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 140
- Length :
- 6.5mm
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2004
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 150mV
- Width :
- 5.5mm
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Max Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector (Ic) (Max) :
- 2A
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Max Power Dissipation :
- 800mW
- Base Part Number :
- 2SD1801
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Datasheets
- 2SD1801S-TL-E

NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1801S-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
2SD1801S-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1801S-TL-E Applications
There are a lot of ON Semiconductor
2SD1801S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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