2SD1796
- Mfr.Part #
- 2SD1796
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO220F
- Stock
- 259
- In Stock :
- 259
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 12 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 4A
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Surface Mount :
- No
- Mount :
- Through Hole
- Package :
- Bulk
- Collector Current-Max (IC) :
- 4 A
- Max Collector Current :
- 4A
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 25 W
- Power - Max :
- 25W
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector-Emitter Voltage-Max :
- 50 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- Sanken Electric Co Ltd
- Product Status :
- Obsolete
- Number of Elements :
- 1
- DC Current Gain-Min (hFE) :
- 2000
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 60MHz
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Series :
- --
- Terminal Position :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 4V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-220F
- JESD-30 Code :
- R-PSFM-T3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 10mA, 3A
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminals :
- 3
- Transition Frequency :
- 60MHz
- Published :
- 2001
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- RoHS :
- Compliant
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Max Power Dissipation :
- 25W
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SD1796

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD1796 Overview
This device has a DC current gain of 2000 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 60MHz.Single BJT transistor comes in a supplier device package of TO-220F.Maximum collector-emitter voltage can be set to 50 V.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 4A volts.
2SD1796 Features
the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 10mA, 3A
a transition frequency of 60MHz
the supplier device package of TO-220F
2SD1796 Applications
There are a lot of Sanken
2SD1796 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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