2SD1785
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- Mfr.Part #
- 2SD1785
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 6A TO220F
- Stock
- 6,218
- In Stock ：
- 6,218
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Package :
- Bulk
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Compliant
- Max Collector Current :
- 6A
- Lead Free :
- Lead Free
- Series :
- -
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Terminations :
- 3
- Max Power Dissipation :
- 30W
- Factory Lead Time :
- 12 Weeks
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Collector-Emitter Voltage-Max :
- 120 V
- Frequency - Transition :
- 100MHz
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 2A
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 6 A
- Supplier Device Package :
- TO-220F
- Power - Max :
- 30W
- Packaging :
- Bulk
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.08
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Collector Current-Max (IC) :
- 6 A
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Manufacturer :
- Sanken Electric Co Ltd
- Transition Frequency :
- 100MHz
- Case Connection :
- Isolated
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- DC Current Gain-Min (hFE) :
- 2000
- Published :
- 2001
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max (Abs) :
- 30 W
- Datasheets
- 2SD1785
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD1785 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 3A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 3mA, 2A.The part has a transition frequency of 100MHz.This product comes in a TO-220F device package from the supplier.A maximal collector-emitter voltage setting of 120 V is available.Device displays Collector Emitter Breakdown (120 V maximal voltage).Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
2SD1785 Features
the DC current gain for this device is 2000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 2A
a transition frequency of 100MHz
the supplier device package of TO-220F
2SD1785 Applications
There are a lot of Sanken
2SD1785 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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