2SD1782KT146R
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- Mfr.Part #
- 2SD1782KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SMT3
- Stock
- 70,751
- In Stock ：
- 70,751
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Max Frequency :
- 100MHz
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Pin Count :
- 3
- Gain Bandwidth Product :
- 120MHz
- Width :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Length :
- 2.9mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 80V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Power Dissipation :
- 200mW
- Height :
- 1mm
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Transition Frequency :
- 120MHz
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- 2SD1782
- hFE Min :
- 120
- Max Power Dissipation :
- 200mW
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Published :
- 1998
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 80V
- Terminal Position :
- Dual
- JESD-609 Code :
- e1
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SD1782KT146R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1782KT146R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SD1782KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 120MHz
2SD1782KT146R Applications
There are a lot of ROHM Semiconductor
2SD1782KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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