2SD1758TLR
- Mfr.Part #
- 2SD1758TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A CPT3
- Stock
- 4,717
- In Stock :
- 4,717
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- HTS Code :
- 8541.29.00.75
- Base Part Number :
- 2SD1758
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 32V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 32V
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 100MHz
- Continuous Collector Current :
- 2A
- Pin Count :
- 3
- Max Power Dissipation :
- 10W
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2010
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 32V
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Datasheets
- 2SD1758TLR

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1758TLR Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 800mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 2A volts is possible.
2SD1758TLR Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
2SD1758TLR Applications
There are a lot of ROHM Semiconductor
2SD1758TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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