2SD1757KT146R
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- Mfr.Part #
- 2SD1757KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SMT3
- Stock
- 1,722
- In Stock ：
- 1,722
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 15V
- hFE Min :
- 120
- Voltage - Rated DC :
- 15V
- Max Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 500mA
- Contact Plating :
- Copper, Silver, Tin
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 500mA
- Length :
- 2.9mm
- Published :
- 1998
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Emitter Saturation Voltage :
- 100mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 13 Weeks
- Width :
- 1.6mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Height :
- 1mm
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Base Part Number :
- 2SD1757
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 6.5V
- Datasheets
- 2SD1757KT146R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1757KT146R Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 15V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SD1757KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 500mA
a transition frequency of 150MHz
2SD1757KT146R Applications
There are a lot of ROHM Semiconductor
2SD1757KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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