2SD1683S
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- Mfr.Part #
- 2SD1683S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A TO126ML
- Stock
- 34,649
- In Stock ：
- 34,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Height :
- 11mm
- Published :
- 2003
- Max Collector Current :
- 4A
- Length :
- 8mm
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- hFE Min :
- 40
- Width :
- 3.3mm
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Max Frequency :
- 1MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 190mV
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector (Ic) (Max) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.5W
- Datasheets
- 2SD1683S
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2SD1683S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 2V.With a collector emitter saturation voltage of 190mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2SD1683S Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1683S Applications
There are a lot of ON Semiconductor
2SD1683S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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