2SD1664T100Q
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- Mfr.Part #
- 2SD1664T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 15,139
- In Stock ：
- 15,139
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- VCEsat-Max :
- 0.4 V
- Power - Max :
- 2W
- Factory Lead Time :
- 12 Weeks
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 32V
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Frequency :
- 150MHz
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- hFE Min :
- 82
- Transistor Type :
- NPN
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Pin Count :
- 3
- Max Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Published :
- 1998
- Number of Elements :
- 1
- Base Part Number :
- 2SD1664
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 32V
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- Max Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Terminal Finish :
- TIN COPPER
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- JESD-609 Code :
- e2
- Contact Plating :
- Copper, Tin
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 32V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- REACH SVHC :
- No SVHC
- Datasheets
- 2SD1664T100Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100Q Applications
There are a lot of ROHM Semiconductor
2SD1664T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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