2SD1624S-TD-E
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- Mfr.Part #
- 2SD1624S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A PCP
- Stock
- 1,016
- In Stock ：
- 1,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- Published :
- 2012
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Frequency - Transition :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 150MHz
- Base Part Number :
- 2SD1624
- Length :
- 4.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- HTS Code :
- 8541.21.00.75
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Max Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e6
- Factory Lead Time :
- 5 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Height :
- 1.5mm
- Number of Pins :
- 3
- Terminal Form :
- Flat
- hFE Min :
- 100
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Width :
- 2.5mm
- Pin Count :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Datasheets
- 2SD1624S-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1624S-TD-E Overview
This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 3A volts.
2SD1624S-TD-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1624S-TD-E Applications
There are a lot of ON Semiconductor
2SD1624S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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