2SD1618S-TD-E
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- Mfr.Part #
- 2SD1618S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A PCP
- Stock
- 36,973
- In Stock ：
- 36,973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Single
- Transition Frequency :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-243AA
- Power - Max :
- 500mW
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Base Voltage (VCBO) :
- 20V
- Factory Lead Time :
- 38 Weeks
- JESD-609 Code :
- e6
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 15V
- hFE Min :
- 140
- Number of Elements :
- 1
- Frequency - Transition :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Max Collector Current :
- 700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 50mA 2V
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Terminal Form :
- Flat
- Datasheets
- 2SD1618S-TD-E
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1618S-TD-E Overview
DC current gain in this device equals 140 @ 50mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 80mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 250MHz.In extreme cases, the collector current can be as low as 700mA volts.
2SD1618S-TD-E Features
the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1618S-TD-E Applications
There are a lot of ON Semiconductor
2SD1618S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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