2SCR582D3TL1
- Mfr.Part #
- 2SCR582D3TL1
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 10A TO252
- Stock
- 4,567
- In Stock :
- 4,567
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temp Range :
- -55C to 150C
- Series :
- -
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Current - Collector (Ic) (Max) :
- 10 A
- Operating Temperature Classification :
- Military
- Supplier Device Package :
- TO-252
- Product Status :
- Active
- RoHS :
- Details
- Minimum DC Current Gain :
- 200
- Power - Max :
- 10 W
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Subcategory :
- Transistors
- Mounting Style :
- SMD/SMT
- Mounting :
- Surface Mount
- Minimum Operating Temperature :
- -
- MSL :
- MSL 1 - Unlimited
- Transistor Polarity :
- NPN
- Product Type :
- BJTs - Bipolar Transistors
- Emitter-Base Voltage :
- 6(V)
- Category :
- Bipolar Power
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 4A
- Number of Elements per Chip :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Pin Count :
- 2 +Tab
- Output Power :
- Not Required(W)
- Maximum Operating Temperature :
- + 150 C
- Qualification :
- -
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel
- Transition Frequency :
- 250MHz
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Technology :
- Si
- Rad Hardened :
- No
- Brand :
- Rohm Semiconductor
- Operating Temperature :
- 150°C (TJ)
- Frequency :
- 250(MHz)
- Collector-Base Voltage :
- 30(V)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A, 3V
- Power Dissipation :
- 10(W)
- Configuration :
- Single
- Package Type :
- DPAK
- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Bipolar Transistors - BJT
- Collector Current (DC) :
- 10(A)
- Number of Elements :
- 1
- Package / Case :
- TO-252-3
- Continuous Collector Current :
- 10A
- Datasheets
- 2SCR582D3TL1

NPN 150°C (TJ) 1µA (ICBO) 1 Elements TO-252-3 Tape and Reel Surface Mount
2SCR582D3TL1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A, 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 10A in order to achieve high efficiency.The part has a transition frequency of 250MHz.This product comes in a TO-252 device package from the supplier.Device displays Collector Emitter Breakdown (30 V maximal voltage).
2SCR582D3TL1 Features
the DC current gain for this device is 200 @ 1A, 3V
the vce saturation(Max) is 350mV @ 200mA, 4A
a transition frequency of 250MHz
the supplier device package of TO-252
2SCR582D3TL1 Applications
There are a lot of ROHM Semiconductor
2SCR582D3TL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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