2SCR533PT100
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- Mfr.Part #
- 2SCR533PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A MPT3
- Stock
- 3,996
- In Stock ：
- 3,996
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 320MHz
- Max Power Dissipation :
- 2W
- Contact Plating :
- Copper, Tin
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN COPPER
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Configuration :
- Single
- Continuous Collector Current :
- 3A
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Max Frequency :
- 320MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Max Breakdown Voltage :
- 50V
- hFE Min :
- 180
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Base Part Number :
- 2SCR533
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 3V
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Datasheets
- 2SCR533PT100
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR533PT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 50mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 320MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SCR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR533PT100 Applications
There are a lot of ROHM Semiconductor
2SCR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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