2SCR522UBTL
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- Mfr.Part #
- 2SCR522UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A UMT3F
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 400MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Collector Current :
- 200mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 120
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- Max Collector Current :
- 200mA
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 20V
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Package / Case :
- SC-85
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 400MHz
- Pbfree Code :
- yes
- Published :
- 2010
- Datasheets
- 2SCR522UBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR522UBTL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 400MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2SCR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522UBTL Applications
There are a lot of ROHM Semiconductor
2SCR522UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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