2SCR514P5T100
- Mfr.Part #
- 2SCR514P5T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 15,385
- In Stock :
- 15,385
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 15mA, 300mA
- Published :
- 2016
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Power - Max :
- 500mW
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 80V
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 320MHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 13 Weeks
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 320MHz
- Max Collector Current :
- 700mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- JESD-30 Code :
- R-PSSO-F3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Datasheets
- 2SCR514P5T100

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR514P5T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 300mV @ 15mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 320MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 700mA volts can be achieved.
2SCR514P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
a transition frequency of 320MHz
2SCR514P5T100 Applications
There are a lot of ROHM Semiconductor
2SCR514P5T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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