2SAR533PT100
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- Mfr.Part #
- 2SAR533PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A MPT3
- Stock
- 1,163
- In Stock ：
- 1,163
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- 2SAR533
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 180
- JESD-609 Code :
- e2
- Max Breakdown Voltage :
- 50V
- Frequency - Transition :
- 300MHz
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Published :
- 2013
- Configuration :
- Single
- Contact Plating :
- Copper, Tin
- Number of Terminations :
- 3
- Terminal Finish :
- TIN COPPER
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 50V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 50mA 3V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Lead Free :
- Lead Free
- Continuous Collector Current :
- -3A
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Max Frequency :
- 300MHz
- Datasheets
- 2SAR533PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR533PT100 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 50mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 1A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SAR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2SAR533PT100 Applications
There are a lot of ROHM Semiconductor
2SAR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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