2SAR502EBTL
- Mfr.Part #
- 2SAR502EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A EMT3F
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- SC-89, SOT-490
- Factory Lead Time :
- 13 Weeks
- Weight :
- 29.993795mg
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 520MHz
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 200
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- -30V
- Published :
- 2015
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 150mW
- Emitter Base Voltage (VEBO) :
- -6V
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -150mV
- Collector Emitter Voltage (VCEO) :
- 400mV
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SAR502EBTL

PNP 150°C TJ 200nA ICBO SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR502EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor
2SAR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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