2N5770

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

hFE Min :

20

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

900MHz

Transition Frequency :

900MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Position :

BOTTOM

Polarity :

NPN

Qualification Status :

Not Qualified

Published :

2008

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

50mA

Emitter Base Voltage (VEBO) :

3V

Number of Elements :

1

Continuous Collector Current :

50mA

Transistor Application :

AMPLIFIER

Factory Lead Time :

8 Weeks

Frequency - Transition :

900MHz

DC Current Gain-Min (hFE) :

50

Collector-Base Capacitance-Max :

1.7pF

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Through Hole

Collector Emitter Saturation Voltage :

400mV

Pbfree Code :

No

Package / Case :

TO-92

HTS Code :

8541.21.00.75

JESD-30 Code :

O-PBCY-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

625mW

Max Operating Temperature :

150°C

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

15V