2N5730

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Mfr.Part #
2N5730
Manufacturer
Microchip Technology
Package / Case
TO-210AA, TO-59-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
10,447
In Stock :
10,447

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
45 W
Configuration :
Single
Supplier Device Package :
TO-59
Product Status :
Active
Package Shape :
Round
Transistor Polarity :
NPN
Operating Temperature :
-
Polarity/Channel Type :
NPN
JESD-30 Code :
O-MUPM-D3
Current - Collector (Ic) (Max) :
10 A
Terminal Form :
Solder Lug
Number of Terminals :
3
Series :
-
Collector Current-Max (IC) :
10 A
Power Dissipation Ambient-Max :
52.5 W
Mounting Type :
Stud Mount
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-59
Surface Mount :
No
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Transistor Type :
NPN
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Frequency - Transition :
-
Product Type :
BJTs - Bipolar Transistors
Voltage - Collector Emitter Breakdown (Max) :
80 V
Qualification Status :
Not Qualified
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Bulk
Brand :
Microchip Technology
Subcategory :
Transistors
Terminal Position :
UPPER
Product Category :
Bipolar Transistors - BJT
Number of Elements :
1
VCEsat-Max :
1.2 V
Technology :
Si
Manufacturer :
Microchip
Collector-Emitter Voltage-Max :
80 V
Package / Case :
TO-210AA, TO-59-4, Stud
Power Dissipation-Max (Abs) :
45 W
Pbfree Code :
No
DC Current Gain-Min (hFE) :
30
Vce Saturation (Max) @ Ib, Ic :
-
Datasheets
2N5730
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5730 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-, Mounting Type:Stud Mount, Package / Case:TO-210AA, TO-59-4, Stud, 2N5730 pinout, 2N5730 datasheet PDF, 2N5730 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5730 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - - 1 Elements SILICON NPN TO-210AA, TO-59-4, Stud Stud Mount

2N5730 Overview


In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is -.Supplier device package TO-59 comes with the product.Voltage of maximal collector-emitter is set to 80 V.The device exhibits a collector-emitter breakdown at 80 V.

2N5730 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-59


2N5730 Applications


There are a lot of Microchip Technology
2N5730 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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