2N5730

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Mfr.Part #
2N5730
Manufacturer
Microchip Technology
Package / Case
TO-210AA, TO-59-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
10,447
In Stock :
10,447

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-210AA, TO-59-4, Stud
Terminal Position :
UPPER
Package Shape :
Round
Frequency - Transition :
-
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Current - Collector Cutoff (Max) :
-
Vce Saturation (Max) @ Ib, Ic :
-
Current - Collector (Ic) (Max) :
10 A
Supplier Device Package :
TO-59
Product Category :
Bipolar Transistors - BJT
Transistor Element Material :
SILICON
Transistor Type :
NPN
Number of Terminals :
3
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
80 V
Transistor Polarity :
NPN
Power Dissipation Ambient-Max :
52.5 W
Pbfree Code :
No
JEDEC-95 Code :
TO-59
Series :
-
JESD-30 Code :
O-MUPM-D3
Technology :
Si
DC Current Gain-Min (hFE) :
30
Power Dissipation-Max (Abs) :
45 W
Brand :
Microchip Technology
Manufacturer :
Microchip
Terminal Form :
Solder Lug
Operating Temperature :
-
Collector-Emitter Voltage-Max :
80 V
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Polarity/Channel Type :
NPN
Product Status :
Active
Power - Max :
45 W
ECCN Code :
EAR99
Subcategory :
Transistors
Reach Compliance Code :
Unknown
Collector Current-Max (IC) :
10 A
Product Type :
BJTs - Bipolar Transistors
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
VCEsat-Max :
1.2 V
Package :
Bulk
Mounting Type :
Stud Mount
Datasheets
2N5730
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5730 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-210AA, TO-59-4, Stud, Operating Temperature:-, Mounting Type:Stud Mount, 2N5730 pinout, 2N5730 datasheet PDF, 2N5730 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5730 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - - 1 Elements SILICON NPN TO-210AA, TO-59-4, Stud Stud Mount

2N5730 Overview


In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is -.Supplier device package TO-59 comes with the product.Voltage of maximal collector-emitter is set to 80 V.The device exhibits a collector-emitter breakdown at 80 V.

2N5730 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-59


2N5730 Applications


There are a lot of Microchip Technology
2N5730 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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